Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 160A
• Power dissipation 230W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 4.2mΩ
• Mounting THT
• Gate charge 85nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 2.012 g
• Manufacturer part number: IRFB3306PBF

Parametri

60V
120A
230W
0R0033
TO-220

Papildu dokumentācija