Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: DIP-4
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 1.7 A
• Rds On - Drain-Source Resistance: 200 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 11 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 1.3 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Vishay / Siliconix
• Configuration: Single
• Height: 3.37 mm
• Length: 6.29 mm
• Product Type: MOSFET
• Series: IRFD

Parametri

60V
1.7A
1.3W
0R2
DIP4

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