Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 195A
• Power dissipation 375W
• Case TO247AC
• Gate-source voltage ±20V
• On-state resistance 2.1mΩ
• Mounting THT
• Gate charge 200nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 5.575 g
• Manufacturer part number: IRFP3006PBF

Parametri

60V
195A
375W
0R0021
TO-247

Papildu dokumentācija