Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 200A
• Power dissipation 280W
• Case TO247AC
• Gate-source voltage ±20V
• On-state resistance 3mΩ
• Mounting THT
• Gate charge 120nC
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 5.573 g
• Oriģināls simbols: IRFP3206PBF

Parametri

60V
120A
280W
0R003
TO-247

Papildu dokumentācija