Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-251-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 79 A
• Rds On - Drain-Source Resistance: 8.4 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 110 W
• Channel Mode: Enhancement
• Brand: Infineon / IR
• Configuration: Single
• Fall Time: 46 ns
• Height: 6.22 mm
• Length: 6.73 mm
• Product Type: MOSFET
• Rise Time: 35 ns
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 55 ns
• Typical Turn-On Delay Time: 13 ns
• Width: 2.38 mm
• Unit Weight: 340 mg

Parametri

60V
79A
110W
0R0071
TO-251

Papildu dokumentācija