Apraksts

• Manufacturer CYG WAYON
• Type of transistor N-MOSFET
• Technology SJ-MOSFET C2
• Polarisation unipolar
• Drain-source voltage 650V
• Drain current 20A
• Power dissipation 147W
• Case TO220-3
• Gate-source voltage ±30V
• On-state resistance 190mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Heatsink thickness 1.2...1.45mm Additional information
• Gross weight: 0.19 g

Parametri

650V
20A
147W
0R19
TO-220

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