Apraksts

• Manufacturer VISHAY
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 650V
• Drain current 5.4A
• Power dissipation 167W
• Case TO220AB
• Gate-source voltage ±30V
• On-state resistance 930mΩ
• Mounting THT
• Gate charge 48nC
• Kind of package tube
• Kind of channel enhanced Additional information
• Gross weight: 1.97 g
• Manufacturer part number: IRFB9N65APBF

Parametri

650V
8.5A
167W
0R93
TO-220

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