Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology CoolMOS™
• Polarisation unipolar
• Drain-source voltage 650V
• Drain current 7A
• Power dissipation 28W
• Case TO220FP
• Gate-source voltage ±20V
• On-state resistance 0.65Ω
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 2.172 g
• Oriģināls simbols: IPA65R650CEXKSA1

Parametri

650V
7A
28W
0R65
TO-220FP

Papildu dokumentācija