Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 75V
• Drain current 82A
• Power dissipation 200W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 13mΩ
• Mounting THT
• Gate charge 106.7nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 2.005 g
• Manufacturer part number: IRF2807PBF

Parametri

75V
75A
230W
0R013
TO-220

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