Apraksts

• Manufacturer: STMicroelectronics
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-247-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 800 V
• Id - Continuous Drain Current: 17 A
• Rds On - Drain-Source Resistance: 295 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 3 V
• Qg - Gate Charge: 70 nC
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 190 W
• Channel Mode: Enhancement
• Tradename: MDmesh
• Series: STW18NM80
• Packaging: Tube
• Brand: STMicroelectronics
• Configuration: Single
• Fall Time: 50 ns
• Product Type: MOSFET
• Rise Time: 28 ns

Parametri

800V
17A
190W
0R295
TO-247

Papildu dokumentācija