Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Technology HiPerFET™, X-Class
• Polarisation unipolar
• Drain-source voltage 850V
• Drain current 3,5A
• Pulsed drain current 10A
• Power dissipation 150W
• Case TO220AB
• Gate-source voltage ±30V
• On-state resistance 2,5Ω
• Mounting THT
• Gate charge 7nC
• Kind of package tube
• Kind of channel enhancement
• Features of semiconductor devices ultra junction x-class
• Reverse recovery time 170ns
• Masa bruto2.058 g

Parametri

850V
3.5A
150W
0R0025
TO-220

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