Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-247-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 800 V
• Id - Continuous Drain Current: 7.8 A
• Rds On - Drain-Source Resistance: 1.2 Ohms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 200 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 190 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Vishay Semiconductors
• Configuration: Single
• Fall Time: 39 ns
• Forward Transconductance - Min: 5.6 S
• Height: 20.82 mm
• Length: 15.87 mm
• Product Type: MOSFET
• Rise Time: 38 ns
• Series: IRFPE

Parametri

800V
7.8A
190W
1R2
TO-247

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