Apraksts

• Manufacturer TEXAS INSTRUMENTS
• Type of transistor N-MOSFET
• Technology NexFET™
• Polarisation unipolar
• Drain-source voltage 80V
• Drain current 150A
• Power dissipation 300W
• Case TO220-3
• Gate-source voltage ±20V
• On-state resistance 2,6mΩ
• Mounting THT
• Gate charge 76nC
• Kind of package tube
• Kind of channel enhanced
• Heatsink thickness 1,14...1,4mm
• Masa bruto1.98 g

Parametri

80V
150A
300W
0R0029
TO-220

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