11N90C Tranzistors N-QFET, 900V, 7A, 120W, 1R1, TO-3PF
11N90C Tranzistors N-QFET, 900V, 7A, 120W, 1R1, TO-3PF

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

11N90C Tranzistors N-QFET, 900V, 7A, 120W, 1R1, TO-3PF

Cena: 3.97 €
00004749
FQAF11N90C
4
  • Apraksts

    • Manufacturer: onsemi
    • Product Category: MOSFET
    • RoHS: Details
    • Technology: Si
    • Mounting Style: Through Hole
    • Package/Case: TO-3PF-3
    • Transistor Polarity: N-Channel
    • Number of Channels: 1 Channel
    • Vds - Drain-Source Breakdown Voltage: 900 V
    • Id - Continuous Drain Current: 7.2 A
    • Rds On - Drain-Source Resistance: 1.1 Ohms
    • Vgs - Gate-Source Voltage: - 30 V, + 30 V
    • Vgs th - Gate-Source Threshold Voltage: 3 V
    • Qg - Gate Charge: 80 nC
    • Minimum Operating Temperature: - 55 C
    • Maximum Operating Temperature: + 150 C
    • Pd - Power Dissipation: 120 W
    • Channel Mode: Enhancement
    • Tradename: QFET
    • Packaging: Tube
    • Configuration: Single
    • Height: 26.7 mm
    • Length: 15.7 mm
    • Series: FQAF11N90C
    • Transistor Type: 1 N-Channel
    • Type: MOSFET
    • Width: 5.7 mm
    • Brand: onsemi / Fairchild
    • Fall Time: 85 ns
    • Product Type: MOSFET
    • Rise Time: 130 ns
    • Factory Pack Quantity: 360
    • Subcategory: MOSFETs
    • Typical Turn-Off Delay Time: 130 ns
    • Typical Turn-On Delay Time: 60 ns
    • Part # Aliases: FQAF11N90C_NL

    Parametri

    900V
    7A
    120W
    1R1
    TO-3PF

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