Apraksts

• Manufacturer: onsemi
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-3PF-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 900 V
• Id - Continuous Drain Current: 7.2 A
• Rds On - Drain-Source Resistance: 1.1 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 3 V
• Qg - Gate Charge: 80 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 120 W
• Channel Mode: Enhancement
• Tradename: QFET
• Packaging: Tube
• Configuration: Single
• Height: 26.7 mm
• Length: 15.7 mm
• Series: FQAF11N90C
• Transistor Type: 1 N-Channel
• Type: MOSFET
• Width: 5.7 mm
• Brand: onsemi / Fairchild
• Fall Time: 85 ns
• Product Type: MOSFET
• Rise Time: 130 ns
• Factory Pack Quantity: 360
• Subcategory: MOSFETs
• Typical Turn-Off Delay Time: 130 ns
• Typical Turn-On Delay Time: 60 ns
• Part # Aliases: FQAF11N90C_NL

Parametri

900V
7A
120W
1R1
TO-3PF

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