Apraksts

• Manufacturer: Toshiba
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: SC-67-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 900 V
• Id - Continuous Drain Current: 3 A
• Rds On - Drain-Source Resistance: 4.3 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 17 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 40 W
• Channel Mode: Enhancement
• Tradename: MOSIV
• Series: 2SK3564
• Brand: Toshiba
• Configuration: Single
• Fall Time: 35 ns
• Forward Transconductance - Min: 0.65 S
• Height: 15 mm
• Length: 10 mm
• Product Type: MOSFET
• Rise Time: 20 ns
• 50
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 125 ns
• Typical Turn-On Delay Time: 60 ns
• Width: 4.5 mm
• Unit Weight: 1,700 g

Parametri

900V
3A
40W
3R7

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