Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: N
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 18 A
• Rds On - Drain-Source Resistance: 170 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 40 W
• Channel Mode: Enhancement
• Packaging: Tube
• Configuration: Single
• Height: 15.65 mm
• Length: 10 mm
• Series: BTS113
• Transistor Type: 1 N-Channel
• Width: 4.4 mm
• Brand: Infineon Technologies
• Fall Time: 40 ns
• Product Type: MOSFET
• Rise Time: 55 ns
• Factory Pack Quantity: 500
• Subcategory: MOSFETs
• Typical Turn-Off Delay Time: 45 ns
• Typical Turn-On Delay Time: 15 ns

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