Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-263
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 6.7 A
• Rds On - Drain-Source Resistance: 50 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 75 W
• Channel Mode: Enhancement
• Transistor Type: 1 N-Channel
• Width: 4.4 mm
• Brand: Infineon Technologies
• Fall Time: 75 ns
• Product Type: MOSFET
• Rise Time: 60 ns
• Subcategory: MOSFETs
• Typical Turn-Off Delay Time: 100 ns
• Typical Turn-On Delay Time: 25 ns

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