Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: N
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-218-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 50 V
• Id - Continuous Drain Current: 58 A
• Rds On - Drain-Source Resistance: 18 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 170 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 250 ns
• Height: 20.3 mm
• Length: 15 mm
• Product Type: MOSFET
• Rise Time: 150 ns

Parametri

Papildu dokumentācija