Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: TO-263-7
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 49 V
• Id - Continuous Drain Current: 36 A
• Rds On - Drain-Source Resistance: 6.5 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1.6 V
• Qg - Gate Charge: 155 nC
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 300 W
• Channel Mode: Enhancement
• Qualification: AEC-Q101
• Series: BTS282
• Packaging: Reel
• Packaging: Cut Tape
• Packaging: MouseReel
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 36 ns
• Forward Transconductance - Min: 30 S
• Height: 4.4 mm
• Length: 10 mm
• Product Type: MOSFET
• Rise Time: 37 ns

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