Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor IGBT
• Technology TRENCHSTOP™ 5
• Collector-emitter voltage 650V
• Collector current 25A
• Power dissipation 62.5W
• Case D2PAK
• Gate-emitter voltage ±20V
• Pulsed collector current 60A
• Mounting SMD
• Gate charge 48nC
• Kind of package reel, tape
• Turn-on time 40ns
• Turn-off time 183ns
• Semiconductor structure single transistor
• Features of semiconductor devices integrated anti-parallel diode
• Gross weight1.71 g

Parametri

125W
TO-263
SMD
20A
650V
IGBT+d

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