Apraksts

• Manufacturer: Infineon
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: DPAK-3
• Mounting Style: SMD/SMT
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Collector-Emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 30 V
• Continuous Collector Current at 25 C: 24 A
• Pd - Power Dissipation: 69 W
• Maximum Operating Temperature: + 150 C
• Packaging: Tube
• Brand: Infineon / IR
• Continuous Collector Current Ic Max: 24 A
• Gate-Emitter Leakage Current: 100 nA
• Product Type: IGBT Transistors

Parametri

69W
TO-263
SMD
8A
600V
Viens IGBT

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