Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor IGBT
• Collector-emitter voltage 600V
• Collector current 10A
• Power dissipation 110W
• Case TO220AB
• Gate-emitter voltage ±20V
• Pulsed collector current 30A
• Mounting THT
• Gate charge 62nC
• Kind of package tube
• Semiconductor structure single transistor
• Features of semiconductor devices integrated anti-parallel diode
• Gross weight2.022 g

Parametri

110W
TO-220
THT
10A
600V
IGBT+d

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