Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor IGBT
• Collector-emitter voltage 1.2kV
• Collector current 30A
• Power dissipation 110W
• Case TO247-3
• Gate-emitter voltage ±20V
• Pulsed collector current 45A
• Mounting THT
• Gate charge 85nC
• Kind of package tube
• Semiconductor structure single transistor
• Features of semiconductor devices integrated anti-parallel diode
• Additional information
• Gross weight: 6.175 g
• Manufacturer part number: IKW15T120

Parametri

110W
TO-247
THT
15A
1200V
IGBT+d

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