Apraksts

• Manufacturer: Infineon
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1200 V
• Collector-Emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 50 A
• Pd - Power Dissipation: 349 W
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 175 C
• Series: Trenchstop IGBT4
• Packaging: Tube
• Height: 20.95 mm
• Length: 15.9 mm
• Width: 5.3 mm
• Brand: Infineon Technologies
• Gate-Emitter Leakage Current: 200 nA
• Product Type: IGBT Transistors

Parametri

349W
TO-247
THT
25A
1200V
IGBT+d

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