Apraksts

• Manufacturer STMicroelectronics
• Type of transistor IGBT
• Collector-emitter voltage 600V
• Collector current 30A
• Power dissipation 260W
• Case TO220AB
• Gate-emitter voltage ±20V
• Pulsed collector current 120A
• Mounting THT
• Gate charge 105nC
• Kind of package tube
• Features of semiconductor devices integrated anti-parallel diode
• Gross weight1.976 g

Parametri

TO-220
THT
600V
260W
30A
IGBT+d

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