Apraksts

• IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-247
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1300 V
• Collector-Emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current at 25 C: 55 A
• Pd - Power Dissipation: 180 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Series: STGW38IH130D
• Packaging: Tube
• Height: 20.15 mm
• Length: 15.75 mm
• Width: 5.15 mm
• Brand: STMicroelectronics
• Continuous Collector Current: 55 A
• Gate-Emitter Leakage Current: +/- 100 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 30
• Subcategory: IGBTs
• Unit Weight: 6,500 g

Parametri

250W
TO-247
THT
33A
1300V
IGBT+d

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