Apraksts

• Manufacturer IXYS
• Type of transistor N-MOSFET
• Technology HiPerFET™, Polar™
• Polarisation unipolar
• Drain-source voltage 300V
• Drain current 52A
• Power dissipation 400W
• Case TO247-3
• Gate-source voltage ±20V
• On-state resistance 73mΩ
• Mounting THT
• Gate charge 110nC
• Kind of package tube
• Kind of channel enhanced
• Reverse recovery time 160ns
• Show similar products (10831)
• Gross weight6.24 g

Parametri

400W
TO-247
THT
52A
300V
IGBT+d

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