Apraksts

• Manufacturer STMicroelectronics
• Type of transistor IGBT
• Collector-emitter voltage 650V
• Collector current 80A
• Power dissipation 470W
• Case TO247-3
• Gate-emitter voltage ±20V
• Pulsed collector current 300A
• Mounting THT
• Gate charge 414nC
• Kind of package tube
• Features of semiconductor devices integrated anti-parallel diode
• Masa bruto4.582 g

Parametri

470W
TO-247
THT
80A
650V
IGBT+d

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