Apraksts

• Manufacturer TOSHIBA
• Type of transistor IGBT
• Collector-emitter voltage 1.2kV
• Collector current 35A
• Power dissipation 230W
• Case TO3PN
• Gate-emitter voltage ±25V
• Pulsed collector current 80A
• Mounting THT
• Kind of package tube
• Turn-on time 0.3µs
• Turn-off time 0.6µs
• Features of semiconductor devices integrated anti-parallel diode
• Gross weight4.905 g

Parametri

230W
TO-3P
THT
40A
1200V
IGBT+d

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