Apraksts

• Manufacturer: Toshiba
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-3PN-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1000 V
• Collector-Emitter Saturation Voltage: 2.2 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current at 25 C: 50 A
• Pd - Power Dissipation: 156 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Series: GT50N322
• Packaging: Tube
• Brand: Toshiba
• Continuous Collector Current Ic Max: 120 A
• Gate-Emitter Leakage Current: 500 nA
• Product Type: IGBT Transistors

Parametri

156W
2-16C1C
THT
50A
1000V
IGBT+d

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