Apraksts

• Manufacturer: Infineon
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-220AB-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Collector-Emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 18 A
• Pd - Power Dissipation: 90 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Series: RC
• Packaging: Tube
• Brand: Infineon / IR
• Gate-Emitter Leakage Current: 100 nA
• Height: 16.51 mm
• Length: 10.67 mm
• Product Type: IGBT Transistors

Parametri

90W
TO-220AB
THT
10A
600V
IGBT+d

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