Apraksts

• Manufacturer: Infineon
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-274-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1.2 kV
• Collector-Emitter Saturation Voltage: 2.33 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 105 A
• Pd - Power Dissipation: 595 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Packaging: Tube
• Brand: Infineon / IR
• Continuous Collector Current Ic Max: 120 A
• Gate-Emitter Leakage Current: 100 nA
• Height: 20.3 mm
• Length: 15.6 mm
• Product Type: IGBT Transistors

Parametri

595W
SUPER-247
THT
60A
1200V
IGBT+d

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