Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: TO-252-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 55 V
• Id - Continuous Drain Current: 84 A
• Rds On - Drain-Source Resistance: 11 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 4 V
• Qg - Gate Charge: 80 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 3.8 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon / IR
• Configuration: Single
• Fall Time: 48 ns
• Forward Transconductance - Min: 32 S
• Height: 2.3 mm
• Length: 6.5 mm
• Product Type: MOSFET
• Rise Time: 76 ns
• 1000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Type: HEXFET Power MOSFET
• Typical Turn-Off Delay Time: 39 ns
• Typical Turn-On Delay Time: 13 ns
• Width: 6.22 mm
• Part # Aliases: SP001559426
• Unit Weight: 330 mg

Parametri

55V
60A
180W
0R011
TO-263

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