Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: TO-252-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 80 V
• Id - Continuous Drain Current: 30 A
• Rds On - Drain-Source Resistance: 28 mOhms
• Vgs - Gate-Source Voltage: - 16 V, + 16 V
• Vgs th - Gate-Source Threshold Voltage: 2.5 V
• Qg - Gate Charge: 22 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 120 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 55 ns
• Forward Transconductance - Min: 35 S
• Height: 2.3 mm
• Length: 6.5 mm
• Product Type: MOSFET
• Rise Time: 95 ns

Parametri

80V
30A
120W
0R028
TO-252

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