Apraksts

• Manufacturer TOSHIBA
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 5A
• Power dissipation 20W
• Case DPAK
• Gate-source voltage ±20V
• On-state resistance 300mΩ
• Mounting SMD
• Gate charge 22nC
• Kind of package reel,  tape
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 0.386 g
• Oriģināls simbols: 2SK2399(TE16L1,NQ)

Parametri

100V
5A
200W
0R17
TO-252

Papildu dokumentācija