Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology SuperMesh™
• Polarisation unipolar
• Drain-source voltage 600V
• Drain current 2.5A
• Power dissipation 70W
• Case DPAK
• Gate-source voltage ±30V
• On-state resistance 2Ω
• Mounting SMD
• Kind of package reel, tape
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate

Parametri

600V
4A
70W
1R76
TO-252

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