Apraksts

• Manufacturer TEXAS INSTRUMENTS
• Type of transistor N-MOSFET
• Technology NexFET™
• Polarisation unipolar
• Drain-source voltage 40V
• Drain current 200A
• Pulsed drain current 400A
• Power dissipation 250W
• Case D2PAK
• Gate-source voltage ±20V
• On-state resistance 2,6mΩ
• Mounting SMD
• Gate charge 119nC
• Kind of package reel, tape
• Kind of channel enhancement
• Masa bruto1.694 g

Parametri

40V
0R0014
TO-263
200A
250W

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