Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology CoolMOS™ P7
• Polarisation unipolar
• Drain-source voltage 600V
• Drain current 8A
• Power dissipation 53W
• Case PG-TO252-3
• Gate-source voltage ±20V
• On-state resistance 0.28Ω
• Mounting SMD
• Gate charge 18nC
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate Additional information
• Gross weight: 1.5 g

Parametri

600V
12A
53W
0R28
TO-252

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