Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology CoolMOS™ P7
• Polarisation unipolar
• Drain-source voltage 600V
• Drain current 6A
• Power dissipation 41W
• Case PG-TO252-3
• Gate-source voltage ±20V
• On-state resistance 0.36Ω
• Mounting SMD
• Gate charge 13nC
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Additional information
• Gross weight: 0.443 g
• Manufacturer part number: IPD60R360P7ATMA1

Parametri

600V
TO-252
6A
41W
0R36

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