IRF530NS SMD Tranzistors N-FET, 100V,  ±20V, 17A, 70W, 0R09, TO-263

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

IRF530NS SMD Tranzistors N-FET, 100V, ±20V, 17A, 70W, 0R09, TO-263

Cena: 1.78 €
00019155
IRF530NSPBF
5
  • Apraksts

    • Manufacturer: Infineon
    • Product Category: MOSFET
    • RoHS: Details
    • Technology: Si
    • Mounting Style: SMD/SMT
    • Package/Case: D2PAK-3
    • Transistor Polarity: N-Channel
    • Number of Channels: 1 Channel
    • Vds - Drain-Source Breakdown Voltage: 100 V
    • Id - Continuous Drain Current: 17 A
    • Rds On - Drain-Source Resistance: 90 mOhms
    • Vgs - Gate-Source Voltage: - 20 V, + 20 V
    • Qg - Gate Charge: 24.7 nC
    • Minimum Operating Temperature: - 55 C
    • Maximum Operating Temperature: + 175 C
    • Pd - Power Dissipation: 3.8 W
    • Channel Mode: Enhancement
    • Packaging: Tube
    • Brand: Infineon Technologies
    • Configuration: Single
    • Fall Time: 25 ns
    • Height: 2.3 mm
    • Length: 6.5 mm
    • Product Type: MOSFET
    • Rise Time: 22 ns
    • 1000
    • Subcategory: MOSFETs
    • Transistor Type: 1 N-Channel
    • Type: HEXFET Power MOSFET
    • Typical Turn-Off Delay Time: 35 ns
    • Typical Turn-On Delay Time: 9.2 ns
    • Width: 6.22 mm
    • Part # Aliases: SP001551118
    • Unit Weight: 330 mg

    Parametri

    100V
    17A
    70W
    0R09
    TO-263

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