Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOT-23-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 25 V
• Id - Continuous Drain Current: 5.8 A
• Rds On - Drain-Source Resistance: 41 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1.7 V
• Qg - Gate Charge: 5.4 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 1.25 W
• Channel Mode: Enhancement
• Tradename: HEXFET
• Packaging: Reel
• Packaging: Cut Tape
• Packaging: MouseReel
• Brand: Infineon / IR
• Configuration: Single
• Height: 1.1 mm
• Length: 2.9 mm
• Product Type: MOSFET
• Series: N-Channel
• 9000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Width: 1.3 mm
• Part # Aliases: IRFML8244TRPBF SP001566992
• Unit Weight: 8 mg

Parametri

25V
5.8A
1.25W
0R024
SOT23

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