Apraksts

• Manufacturer Infineon (IRF)
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 31A
• Power dissipation 110W
• Case DPAK
• Gate-source voltage ±20V
• On-state resistance 39mΩ
• Mounting SMD
• Gate charge 37nC
• Kind of channel enhanced
• Additional information
• Gross weight: 0.326 g
• Manufacturer part number: IRFR3410PBF

Parametri

100V
22A
110W
0R039
TO-252

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