Apraksts

• Manufacturer Infineon (IRF)
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 71A
• Power dissipation 140W
• Case DPAK
• Gate-source voltage ±20V
• On-state resistance 13mΩ
• Mounting SMD
• Gate charge 62nC
• Kind of channel enhanced
• Additional information
• Gross weight: 0.321 g
• Manufacturer part number: IRFR3505PBF

Parametri

55V
30A
140W
0R013
TO-252

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