Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: TO-252-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 200 V
• Id - Continuous Drain Current: 24 A
• Rds On - Drain-Source Resistance: 100 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Qg - Gate Charge: 57 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 170 W
• Channel Mode: Enhancement
• Packaging: Tube
• Configuration: Single
• Height: 2.3 mm
• Length: 6.5 mm
• Transistor Type: 1 N-Channel
• Type: Smps MOSFET
• Width: 6.22 mm
• Brand: Infineon / IR
• Fall Time: 16 ns
• Product Type: MOSFET
• Rise Time: 32 ns
• Factory Pack Quantity: 1000
• Subcategory: MOSFETs
• Typical Turn-Off Delay Time: 26 ns
• Typical Turn-On Delay Time: 14 ns

Parametri

200V
24A
170W
0R1
TO-263

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