Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-251-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 55 V
• Id - Continuous Drain Current: 59 A
• Rds On - Drain-Source Resistance: 14.5 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Qg - Gate Charge: 29 nC
• Pd - Power Dissipation: 110 W
• Packaging: Tube
• Configuration: Single
• Height: 6.22 mm
• Length: 6.73 mm
• Transistor Type: 1 N-Channel
• Width: 2.38 mm
• Brand: Infineon / IR
• Product Type: MOSFET
• Factory Pack Quantity: 75

Parametri

55V
42A
110W
0R0145
TO-251

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