Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 17A
• Power dissipation 3.8W
• Case D2PAK
• Gate-source voltage ±20V
• Mounting SMD
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Additional information
• Gross weight: 1.615 g
• Manufacturer part number: IRL530NSTRLPBF

Parametri

100V
15A
63W
0R12
TO-263

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