Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOT-223-4
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 55 V
• Id - Continuous Drain Current: 3.8 A
• Rds On - Drain-Source Resistance: 40 mOhms
• Vgs - Gate-Source Voltage: - 16 V, + 16 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 32 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 2.1 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 22 ns
• Forward Transconductance - Min: 5.1 S
• Height: 1.6 mm
• Length: 6.5 mm
• Product Type: MOSFET
• Rise Time: 12 ns

Parametri

55V
3.8A
2.1W
0R04
SOT223

Papildu dokumentācija