Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOT-23-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 30 V
• Id - Continuous Drain Current: 5.3 A
• Rds On - Drain-Source Resistance: 27 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1.3 V
• Qg - Gate Charge: 2.6 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 1.3 W
• Channel Mode: Enhancement
• Tradename: HEXFET
• Series: N-Channel
• Packaging: Reel
• Packaging: Cut Tape
• Packaging: MouseReel
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 4.4 ns
• Forward Transconductance - Min: 9.5 s
• Height: 1.1 mm
• Length: 2.9 mm
• Product Type: MOSFET
• Rise Time: 4.4 ns
• 6000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 7.4 ns
• Typical Turn-On Delay Time: 5.2 ns
• Width: 1.3 mm
• Part # Aliases: IRLML0030TRPBF SP001568604
• Unit Weight: 8 mg

Parametri

30V
5.3A
1.3W
0R027
SOT23

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