Apraksts

• Manufacturer Infineon (IRF)
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 40V
• Drain current 343A
• Power dissipation 375W
• Case D2PAK
• Gate-source voltage ±20V
• On-state resistance 1.7mΩ
• Mounting SMD
• Gate charge 108nC
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Additional information
• Gross weight: 1.488 g
• Manufacturer part number: IRLS3034PBF

Parametri

40V
195A
375W
0R0014
TO-263

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