Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 2 Channel
• Vds - Drain-Source Breakdown Voltage: 100 V
• Id - Continuous Drain Current: 11 A
• Rds On - Drain-Source Resistance: 58 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1.8 V
• Qg - Gate Charge: 12 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 18 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Dual
• Fall Time: 4.3 ns
• Height: 16.15 mm
• Length: 10.65 mm
• Product Type: MOSFET
• Rise Time: 8.3 ns

Parametri

100V
11A
18W
0R034
TO-220F-5L

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